1 edition of Accurate linewidth measurement on integrated-circuit photomasks found in the catalog.
Accurate linewidth measurement on integrated-circuit photomasks
by U.S. Dept. of Commerce, National Bureau of Standards : U.S. Govt. Print. Off. : for sale by the Supt. of Docs., U.S. Govt. Print. Off. in Washington, D.C
Written in English
|Statement||John M. Jerke, editor, Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards.|
|Series||Semiconductor measurement technology, NBS special publication ; 400-43, NBS special publication ;, 400-43.|
|Contributions||Jerke, John M., National Engineering Laboratory (United States.) Electron Devices Division., United States. Defense Advanced Research Projects Agency., United States. National Bureau fo Standards.|
|LC Classifications||QC100 .U57 no. 400-43, TK7874 .U57 no. 400-43|
|The Physical Object|
|Pagination||x, 154 p. :|
|Number of Pages||154|
|LC Control Number||79600191|
Encyclopedia > letter S > self-heterodyne linewidth measurement. Self-heterodyne Linewidth Measurement. Ask RP Photonics for advice on which technique is best suited to measure the linewidth of a laser. RP Photonics can also help with setting up a linewidth measurement system, including the data acquisition. Definition of uncertainty, U, and standard deviation, S. In this figure: Xt is the “true’ value of desired value of the measurement; Xs is the value assigned to the standard with its precision given by 3S’ and total uncertainty, U’; Xm is the result of .
USA1 US10/, USA USA1 US A1 US A1 US A1 US A US A US A US A1 US A1 US A1 Authority US United States Prior art keywords pattern line width image measurement exposure Prior art date Legal Cited by: Photomasks used for optical lithography contain the pattern of the integrated circuits. The basis is a so called blank: a glass substrate which is coated with a chrome and a resist resist is sensitive to electron beams and can be transferred into the chrome layer via etch processes.
NIPPON FILCON provides various types of photomasks including reticles, working masters, master and copy masks. For photomasks for aligners and steppers, the resolution as precise as µm lines and spaces is supported. Photomask baseplates of most standard mask sizes especially for semiconductors are available. Large photomasks up to mm x mm are . Application of submicron Linewidth Measuring Technique To Photomasks. The Application Of Coherence Probe Microscopy For Submicron Critical Dimension Linewidth Measurement. Integrated Circuit Metrology, Inspection, and Process Control III, pg (19 July ); doi: /
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Semiconductor Measurement Technology: Accurate Linewidth Measurements on Integrated-Circuit Photomasks (NBS Special Publication ) [Unnamed, Unnamed] on *FREE* shipping on qualifying : Unnamed Unnamed. Extension to still smaller dimensions would require the use of either shorter wavelength illumination (LINEWIDTH MEASUREMENTS WITH CONVENTIONAL OPTICAL SYSTEMS ON PHOTOMASKS As noted in the introduction, most optical line width-measurement systems in use today are based on microscopy; the Cited by: Accurate linewidth measurements on integrated-circuit photomasks / By John M.
Jerke, United States. National Bureau of Standards. Special publication., United States. Defense Advanced Research Projects Agency. and Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division. Linewidth measurement: From fine art to science Abstract: Traditional methods of linewidth measurement on integrated circuit photomasks and wafers have employed an optical microscope with some type of measuring eyepiece.
A method is presented for estimating the dollar cost-savings from improving integrated-circuit photomask linewidth measurements. The method is illustrated Accurate linewidth measurement on integrated-circuit photomasks book a case study of a hypothetical semiconductor device manufacturer who uses a Standard Reference Material (SRM) developed at the National Bureau of Standards for optical microscope calibration.
linewidth measurement artifacts Accurate Linewidth Measurement on Integrated Circuit Photomasks (NBS Special Publication ) U.S. Gov't Printing Office. The measurement cycle for practical accurate photomask linewidth measurements is analyzed as a differential measurement- -the linewidth to be measured is compared to a known linewidth on a standard.
19 July Application of submicron Linewidth Measuring Technique To Photomasks. Nelda D. Clelland This paper describes how a technique was developed to make precise and accurate submicron linewidth measurements on photomasks which takes advantage of the inherent benefits of both optical and electrical measurement techniques Author: Nelda D.
Clelland, Geoff S. Glaspie. BATIONAL BUREAU OF STANDARDS LIBRART SEP 1 5 Otf Measurement Assurance for Ho Dimensional Measurements on Integrated-Circuit Photomasks n ° Nte Carroll Croarkin Ruth N.
Varner Statistical Engineering Division Center tor Applied Mathematics National Bureau of Standards Washington, DC ,^ T ° F 'o. PROCEEDINGS VOLUME Micron and Submicron Integrated Circuit Metrology. Editor(s): Kevin M. Monahan. The first and second diffraction orders produed by a laser beam are evaluated to give the width of the grating lines.
Measurements on chrome masks show that this technique is accurate to 5% down to linewidths of μ m. The design of a test set for factory type mask testing. Abstract This paper describes how a technique was developed to make precise and accurate submicron linewidth measurements on photomasks which takes advantage of the inherent benefits of both optical and electrical measurement techniques.
We present the theory of operation for both the optical and electrical equipment used, and the theory behind. International comparisons between National Metrology Institutes are important to verify measurement results and the associated uncertainties.
In this Cited by: Get this from a library. Accurate linewidth measurement on integrated-circuit photomasks. [John M Jerke; Center for Electronics and Electrical Engineering (U.S.).
Electron Devices Division.; United States. Defense Advanced Research Projects Agency.; United States. National Bureau of Standards.;].
For the linewidth measurement, the masks or wafers with their edges are translated rectangularly to a stationary slit in the image plane. Twin parallel springs with a very accurate parallel translation and driven by piezo-electric translators are used for this by: 1. Accurate dimensional measurements are vital to quality control in the semiconductor industry.
A method is presented for estimating the dollar cost-savings from improving integrated-circuit photomask linewidth measurements. PROCEEDINGS VOLUME Integrated Circuit Metrology, Inspection, and Process Control IX.
Editor(s): Marylyn Hoy Bennett *This item is only available on the SPIE Digital Library. Progress on accurate metrology of pitch, height, roughness, and width artifacts using an. Photomask linewidth standards serve as primary standards for the calibration of photomask metrology tools and are available from the national standards organizations of several countries.
These standards are often in the form of chrome-on-quartz photomasks with a variety of linewidth, spacewidth, and pitch patterns. The British and U.S. national laboratories have made comparative measurements.
Spatial Coherence: The Key To Accurate Optical Micrometrology Spatial Coherence: The Key To Accurate Optical Micrometrology Nyyssonen, D. measurement of micrometer-size linewidths on integrated-circuit photomasks The accurate measurement of micrometer -size linewidths on integrated- circuit photo masks and wafers requires more accurate.
measurementsintheumumregimeonintegratedcircuit(IC)photomasks. Inan effort to provide the microelectronicsindustrywithcalibration standards for determining and reducingsystematicerrors in line-spacing and.
REFERENCES [ 1 ]nen "Optical linewidth measurements on photomasks and wafers" VLSI Electronics Microstructure Science Vol 3 () -  M.
ume, y, J. d, J. "Fourier Transform Method for Optical Linewidth Measurement" SPIE Vol Integrated Circuit Metrology II () 71 - 77  E Cited by: 6.Both antireflective (AR)-chromium and bright-chromium photomasks are currently used in the production of integrated circuits.
Differences in the optical transmittance and reflectance of these photomasks can significantly change the line-image threshold required for accurate edge detection in optical microscope linewidth by: 1.self-heterodyne linewidth measurements. For laser linewidth less than Hz, linewidth can be measured directly by 10 km fiber, and in more general case linewidth can be deduced from dB or dB of the fitting Lorentzian curve.
1. Introduction Narrow linewidth lasers are highly desirable for applications such as optical atomic clock.